ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,179, issued on Sept. 8, was assigned to XILINX INC. (San Jose, Calif.). "Programmable hybrid memory and capacitive device in a DRAM process... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,180, issued on Sept. 8, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan). "Semiconductor device and method for forming the... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,181, issued on Sept. 8, was assigned to KIOXIA Corp. (Tokyo). "Semiconductor memory device" was invented by Toshifumi Hashimoto (Fujisawa, ... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,182, issued on Sept. 8, was assigned to Kioxia Corp. (Tokyo). "Memory device" was invented by Taichi Iwasaki (Yokkaichi Mie, Japan) and Kei... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,183, issued on Sept. 8, was assigned to Renesas Electronics Corp. (Tokyo). "Semiconductor device having chip capacitor connected to semicon... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,184, issued on Sept. 8, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Semiconductor device" was invented by Taichi Karino (Mat... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,185, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Integrated circuit device" was invented by J... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,186, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Metal-insulator-metal capacitor... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,187, issued on Sept. 8, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Metal-insulator-metal capacitor structure" ... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,188, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method and structure for diodes... Read More