US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Integrated circuit device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,185, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Integrated circuit device" was invented by Jungmin Park (Suwon-si, South Korea), Hanjin Lim (Suwon-si, South Korea) and Hyungsuk Jung (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device may include a transistor on a substrate, and a capacitor structure electrically connected to the transistor. The capacitor structure may include a first electrode, a dielectric layer structure on the first electrode, and a second electrode on the dielectric layer structure. The dielectric layer structure may include a plurality...