US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Method and structure for diodes with backside contacts" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,188, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method and structure for diodes with backside contacts" was invented by Chih Chieh Yeh (Taipei City, Taiwan), Ming-Shuan Li (Hsinchu County, Taiwan), Chih-Hung Wang (Hsinchu City, Taiwan) and Zi-Ang Su (Taoyuan County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first semiconductor layer having an upper portion over a lower portion, a source/drain feature over the upper portion of the first semiconductor layer, a first contact structure under the lower portion of the first semiconductor layer and ...