US Patent Issued to FUJI ELECTRIC on Sept. 8 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,184, issued on Sept. 8, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Semiconductor device" was invented by Taichi Karino (Matsumoto-city, Japan) and Hitoshi Sumida (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a semiconductor substrate; a first insulating film provided on one surface of the semiconductor substrate; a first resistance layer including polysilicon provided on the first insulating film; a second insulating film provided on the first resistance layer; a second resistance layer including polysilicon provided on the second insulating film so as to overlap with the first...