ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,182, issued on Sept. 8, was assigned to Kioxia Corp. (Tokyo).
"Memory device" was invented by Taichi Iwasaki (Yokkaichi Mie, Japan) and Keisuke Kubota (Yokkaichi Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a memory device includes a first substrate and a second substrate. The first substrate is provided with a first circuit layer on a front surface. The first circuit layer includes a CMOS circuit. The second substrate has a front surface that faces the first substrate. The second substrate is provided with a second circuit layer on the front surface contacting the first circuit layer. The second substrate i...