ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,169, issued on Sept. 8, was assigned to INTEL NDTM US LLC (Santa Clara, Calif.). "Barrier and thin spacer for 3D-NAND complementary metal-o... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,170, issued on Sept. 8, was assigned to Kioxia Corp. (Tokyo). "Semiconductor memory device and method of manufacturing semiconductor memory... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,171, issued on Sept. 8, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Semiconductor device structure and manufactur... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,172, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Vertical nonvolatile memory device having... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,173, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Three-dimensional memory device" was invente... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,174, issued on Sept. 8, was assigned to Institute of Microelectronics, Chinese Academy of Sciences (Beijing). "NOR-type memory device, meth... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,175, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Multi-channel ferroelectric memory ... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,176, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Three-dimensional ferroelectric semiconducto... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,177, issued on Sept. 8, was assigned to Intel Corp. (Santa Clara, Calif.). "Programmable capacitor memory arrays with stacked access transi... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,178, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Scaled one transistor two resistor (1T 2R) m... Read More