US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Multi-channel ferroelectric memory structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,175, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Multi-channel ferroelectric memory structure" was invented by Yen-Chieh Huang (Changhua County, Taiwan), Po-Ting Lin (Taichung City, Taiwan), Song-Fu Liao (Taipei City, Taiwan), Hai-Ching Chen (Hsinchu City, Taiwan), Sai-Hooi Yeong (Zhubei City, Taiwan), Yu-Ming Lin (Hsinchu City, Taiwan) and Chung-Te Lin (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an integrated chip (IC) comprising a first electrode structure disposed in a substrate. A first ferroelectric s...