US Patent Issued to International Business Machines on Sept. 8 for "Scaled one transistor two resistor (1T 2R) memory" (New York Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,178, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Scaled one transistor two resistor (1T 2R) memory" was invented by Min Gyu Sung (Latham, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.), Chanro Park (Clifton Park, N.Y.), Juntao Li (Cohoes, N.Y.) and Soon-Cheon Seo (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a selection transistor having a first drain-source terminal, a second drain-source terminal, at least one channel region between the first and second source-drain terminals, and a gate adjacent the at least one channel region. ...