US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Three-dimensional ferroelectric semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,176, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Three-dimensional ferroelectric semiconductor memory device" was invented by Jeon Il Lee (Suwon-si, South Korea), Seryeun Yang (Suwon-si, South Korea) and Hyeran Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device is provided. The semiconductor memory device includes: a bit line that extends in a first direction; first and second word lines that extend in a second direction and cross the bit line; an active pattern on the bit line between the first and second word lines, the active pattern including first...