US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Vertical nonvolatile memory device having hydrogen diffusion barrier layer and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,172, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Vertical nonvolatile memory device having hydrogen diffusion barrier layer and manufacturing method thereof" was invented by Sohyeon Lee (Suwon-si, South Korea), Seongpil Chang (Suwon-si, South Korea), Sea Hoon Lee (Suwon-si, South Korea), Jaeduk Lee (Seongnam-si, South Korea) and Tackhwi Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical nonvolatile memory device may include a peripheral circuit portion including a memory cell driving circuit and connection wiring; a first hydrogen diffusion barrier layer above the per...