ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,462, issued on Sept. 8, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Apparatus with overlapping deep trench and shallow trench and met... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,463, issued on Sept. 8, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.). "Buffer layer for dielectric protection in physical v... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,464, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Structure having 2D material cappin... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,465, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Conductive structures and methods o... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,466, issued on Sept. 8, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Integrated PVD tungsten liner and seamless CVD tungs... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,467, issued on Sept. 8, was assigned to Georgia Tech Research Corp. (Atlanta). "Methods for etch barrier deposition and devices made accord... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,468, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Metal structures with seams" wa... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,469, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Gate contact structure" was inv... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,470, issued on Sept. 8, was assigned to Tokyo Electron Ltd. (Tokyo). "Contact patterning" was invented by Hojin Kim (Albany, N.Y.), Minseok... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,471, issued on Sept. 8, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device structure with liner layer ... Read More