US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Conductive structures and methods of forming the same" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,465, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Conductive structures and methods of forming the same" was invented by Kan-Ju Lin (Kaohsiung City, Taiwan), Hao-Heng Liu (Hsinchu City, Taiwan), Chien Chang (Hsinchu, Taiwan), Hung-Yi Huang (Hsin-chu City, Taiwan) and Harry Chien (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Depositing a seed layer after formation of the MD in order to reduce or prevent epitaxial growth of the seed layer toward the MD. For example, the seed layer may be deposited using CVD and conformal dry etching. In some implementations, the seed layer may be ...