US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Structure having 2D material capping layer and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,464, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Structure having 2D material capping layer and manufacturing method thereof" was invented by Shu-Wei Li (Hsinchu, Taiwan) and Shin-Yi Yang (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure including a conductive region, a dielectric region, and a capping layer is provided. The conductive region is disposed on or embedded in the dielectric region. The capping layer is disposed on the conductive region. A material of the capping layer includes a 2D material."

The patent was filed on Oct. 2, 2023, under Application ...