US Patent Issued to NANYA TECHNOLOGY on Sept. 8 for "Semiconductor device structure with liner layer having tapered sidewall and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,471, issued on Sept. 8, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device structure with liner layer having tapered sidewall and method for preparing the same" was invented by Jar-Ming Ho (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate; a second dielectric layer disposed over the first dielectric layer; a third dielectric layer disposed over the second dielectric layer; a spacer structure disposed in the second dielectric layer; a conductive structure disposed in the third dielectric lay...