ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,462, issued on Sept. 8, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).
"Apparatus with overlapping deep trench and shallow trench and method of fabricating the same with low defect density" was invented by Thomas Edward Lillibridge (Plano, Texas).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a semiconductor substrate that has a top surface. A trench is formed within the substrate, and a conductive filler structure fills the trench. An insulator is located between the semiconductor substrate and the conductive filler. The insulator has a top portion with a top surface at the top surface of the substrate, The insulator...