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US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,728, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and method f... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Method of forming patterns, package, and manufacturing method of package" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,729, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Method of forming patterns, package, ... और पढ़ें


US Patent Issued to Lam Research on Nov. 3 for "Electrodeposition of cobalt tungsten films" (Oregon, Illinois Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,730, issued on Nov. 3, was assigned to Lam Research Corp. (Fremont, Calif.). "Electrodeposition of cobalt tungsten films" was invented by Ti... और पढ़ें


US Patent Issued to Applied Materials on Nov. 3 for "Method of forming interconnect for semiconductor device" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,731, issued on Nov. 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Method of forming interconnect for semiconductor devic... और पढ़ें


US Patent Issued to Winbond Electronics on Nov. 3 for "Method for forming semiconductor structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,732, issued on Nov. 3, was assigned to Winbond Electronics Corp. (Taichung City, Taiwan). "Method for forming semiconductor structure" was i... और पढ़ें


US Patent Issued to Imec vzw on Nov. 3 for "Method for forming an interconnection structure" (Belgian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,733, issued on Nov. 3, was assigned to Imec vzw (Leuven, Belgium). "Method for forming an interconnection structure" was invented by Anshul ... और पढ़ें


US Patent Issued to NANYA TECHNOLOGY on Nov. 3 for "Semiconductor device structure with liner layer having tapered sidewall and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,734, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device structure with liner layer ha... और पढ़ें


US Patent Issued to NANYA TECHNOLOGY on Nov. 3 for "Semiconductor device with porous layer and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,735, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with porous layer and method ... और पढ़ें


US Patent Issued to NANYA TECHNOLOGY on Nov. 3 for "Semiconductor device with porous layer and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,736, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with porous layer and method ... और पढ़ें


US Patent Issued to NANYA TECHNOLOGY on Nov. 3 for "Method of manufacturing semiconductor structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,737, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Method of manufacturing semiconductor structure" w... और पढ़ें