US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,728, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method for forming the same" was invented by Ta-Chun Lin (Hsinchu, Taiwan) and Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a transistor over the substrate, and a first isolation structure adjacent to the transistor. The transistor includes a channel layer extending along a first direction, a gate structure over the channel layer and extending along a second direction substantially perpendicular to the first direction, and source/drain s...