US Patent Issued to Applied Materials on Nov. 3 for "Method of forming interconnect for semiconductor device" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,731, issued on Nov. 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Method of forming interconnect for semiconductor device" was invented by Hao Jiang (San Jose, Calif.), Chi Lu (Sunnyvale, Calif.), He Ren (San Jose, Calif.), Chi-I Lang (Cupertino, Calif.), Ho-yung David Hwang (Cupertino, Calif.) and Mehul Naik (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming an interconnect structure for semiconductor devices is described. The method comprises etching a patterned interconnect stack for form first conductive lines and expose a top surface of a first etch stop layer; etching the first etch stop lay...