US Patent Issued to NANYA TECHNOLOGY on Nov. 3 for "Semiconductor device structure with liner layer having tapered sidewall and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,734, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device structure with liner layer having tapered sidewall and method for preparing the same" was invented by Jar-Ming Ho (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides methods for fabricating low resistivity metal interconnect structures having self-formed diffusion barriers, and semiconductor devices including low resistivity metal interconnect structures having self-formed diffusion barriers. For example, the semiconductor device includes: a dielectric layer disposed on the substrate; an openin...