ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,730, issued on Nov. 3, was assigned to Lam Research Corp. (Fremont, Calif.).
"Electrodeposition of cobalt tungsten films" was invented by Tighe A. Spurlin (Portland, Ore.), Edward C. Opocensky (Aloha, Ore.), Zhange Feng (Naperville, Ill.), Matthew A. Rigsby (Tualatin, Ore.) and Jonathan David Reid (Sherwood, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Tungsten-containing metal films may be deposited in recessed features of semiconductor substrates by electrodeposition. The tungsten-containing metal film is electrodeposited under conditions so that the tungsten-containing metal film is free or substantially free of oxide. Conditions are optimi...