ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,718, issued on Nov. 3, was assigned to Mitsubishi Electric Corp. (Tokyo). "Method of manufacturing semiconductor device and semiconductor ma... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,719, issued on Nov. 3, was assigned to Tokyo Electron Ltd. (Tokyo). "Substrate processing method and substrate processing apparatus using in... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,720, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Method and apparatus for wafer measurement" was in... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,721, issued on Nov. 3, was assigned to QUALCOMM Inc. (San Diego). "Integrated device comprising elongated pads" was invented by Yangyang Sun... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,722, issued on Nov. 3, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Method of forming patterned features" was invented by Yoa... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,723, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC NANJING COMPANY Ltd. (Nanji... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,724, issued on Nov. 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Neutral stress diamond-like carbon" was invented by Ji... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,725, issued on Nov. 3, was assigned to Tokyo Electron Ltd. (Tokyo). "Selective deposition on an existing patterned mask" was invented by Ale... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,726, issued on Nov. 3, was assigned to Tokyo Electron Ltd. (Tokyo). "Substrate processing method and substrate processing apparatus" was inv... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,727, issued on Nov. 3, was assigned to Hangzhou HFC Semiconductor Co. (Hangzhou, China). "Isolation structure for eDRAM and method for makin... और पढ़ें