US Patent Issued to Hangzhou HFC Semiconductor on Nov. 3 for "Isolation structure for eDRAM and method for making same" (Singaporean, Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,727, issued on Nov. 3, was assigned to Hangzhou HFC Semiconductor Co. (Hangzhou, China).

"Isolation structure for eDRAM and method for making same" was invented by Mingyu Hu (Dalian, China) and Liang Li (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "An eDRAM and a method for making it are disclosed. In the method, a pad oxide layer and a pad nitride layer are removed after an active area and a deep trench filled with polysilicon are formed, followed by the formation of a re-deposited oxide layer and a re-deposited nitride layer. The re-deposited nitride layer has greater uniformity than the pad nitride layer that has undergone the formatio...