US Patent Issued on July 14 for "Field peak reduction in semiconductor devices with metal corner rounding" (California, North Carolina Inventors)

Posted On: 2026-07-14

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,852, issued on July 14. "Field peak reduction in semiconductor devices with metal corner rounding" was invented by Olof Tornblad (San Jose,... Read More

US Patent Issued to MITSUMI ELECTRIC on July 14 for "Silicon carbide semiconductor device" (Japanese Inventors)

Posted On: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,853, issued on July 14, was assigned to MITSUMI ELECTRIC Co. LTD. (Tokyo). "Silicon carbide semiconductor device" was invented by Yu Saitoh... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Interconnect structure having a multi-deck conductive feature and method of forming the same" (Taiwanese Inventors)

Posted On: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,854, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Interconnect structure having a mul... Read More

US Patent Issued to Semiconductor Manufacturing International (Shanghai), Semiconductor Manufacturing International (Beijing) on July 14 for "Semiconductor structure comprising air spacer on sidewalls of gate electrode layer and fabrication method thereof" (Chinese Inventor)

Posted On: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,855, issued on July 14, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai) and Semiconductor Manufacturin... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Semiconductor device with compositionally varied hafnium-containing dielectric layers and fabrication method thereof" (Taiwanese Inventors)

Posted On: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,856, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device with compositi... Read More

US Patent Issued to Semiconductor Manufacturing International (Shanghai) on July 14 for "Semiconductor structure and fabrication method thereof" (Chinese Inventor)

Posted On: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,857, issued on July 14, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai). "Semiconductor structure and... Read More

US Patent Issued to Shanghai Huali Integrated Circuit on July 14 for "Process integration method for improving leakage in MV device" (Chinese Inventors)

Posted On: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,858, issued on July 14, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai). "Process integration method for improving leaka... Read More

US Patent Issued to SK hynix on July 14 for "Method of forming semiconductor device including semiconductor liner" (South Korean Inventors)

Posted On: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,859, issued on July 14, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Method of forming semiconductor device including semicon... Read More

US Patent Issued to Applied Materials on July 14 for "Substrate isolated strained gate-all-around field effect transistor" (Missouri Inventor)

Posted On: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,861, issued on July 14, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Substrate isolated strained gate-all-around field ef... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Semiconductor structure and method for forming the same" (Taiwanese Inventors)

Posted On: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,862, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure and met... Read More

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US Patent Issued on July 14 for "Field peak reduction in semiconductor devices with metal corner rounding" (California, North Carolina Inventors)

US Patent Issued to MITSUMI ELECTRIC on July 14 for "Silicon carbide semiconductor device" (Japanese Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Interconnect structure having a multi-deck conductive feature and method of forming the same" (Taiwanese Inventors)

US Patent Issued to Semiconductor Manufacturing International (Shanghai), Semiconductor Manufacturing International (Beijing) on July 14 for "Semiconductor structure comprising air spacer on sidewalls of gate electrode layer and fabrication method thereof" (Chinese Inventor)

US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Semiconductor device with compositionally varied hafnium-containing dielectric layers and fabrication method thereof" (Taiwanese Inventors)

US Patent Issued to Semiconductor Manufacturing International (Shanghai) on July 14 for "Semiconductor structure and fabrication method thereof" (Chinese Inventor)

US Patent Issued to Shanghai Huali Integrated Circuit on July 14 for "Process integration method for improving leakage in MV device" (Chinese Inventors)

US Patent Issued to SK hynix on July 14 for "Method of forming semiconductor device including semiconductor liner" (South Korean Inventors)

US Patent Issued to Applied Materials on July 14 for "Substrate isolated strained gate-all-around field effect transistor" (Missouri Inventor)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Semiconductor structure and method for forming the same" (Taiwanese Inventors)