US Patent Issued to Shanghai Huali Integrated Circuit on July 14 for "Process integration method for improving leakage in MV device" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,858, issued on July 14, was assigned to Shanghai Huali Integrated Circuit Corp. (Shanghai).

"Process integration method for improving leakage in MV device" was invented by Qiwei Wang (Shanghai), Yaoyu Zhan (Shanghai), Tao Liu (Shanghai), Zhigang Zhang (Shanghai) and Haoyu Chen (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The application discloses a process integration method for improving leakage in MV devices, comprising: step I: forming gate structures, step II: depositing a first spacer material layer, step III: forming an additional spacer material layer, step IV: forming a first mask layer to cover an MV device formation region and ...