US Patent Issued to Semiconductor Manufacturing International (Shanghai), Semiconductor Manufacturing International (Beijing) on July 14 for "Semiconductor structure comprising air spacer on sidewalls of gate electrode layer and fabrication method thereof" (Chinese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,855, issued on July 14, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai) and Semiconductor Manufacturing International (Beijing) Corp. (Beijing).

"Semiconductor structure comprising air spacer on sidewalls of gate electrode layer and fabrication method thereof" was invented by Nan Wang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and its fabrication method are provided. The semiconductor structure includes: a substrate including a base substrate, fins, and an isolation structure; a first dielectric layer; gate structures in the first dielectric layer, where each gate structur...