US Patent Issued to MITSUMI ELECTRIC on July 14 for "Silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,853, issued on July 14, was assigned to MITSUMI ELECTRIC Co. LTD. (Tokyo).

"Silicon carbide semiconductor device" was invented by Yu Saitoh (Osaka, Japan) and Takeyoshi Masuda (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes a silicon carbide substrate having a first main surface. The first main surface is provided with a gate trench. A contour of the gate trench on the first main surface is curved along a third side surface and a fourth side surface, and a contour of the gate trench in a cross section includes a first local minimum point at which a radius of curvature is a local minimum at...