US Patent Issued to Applied Materials on July 14 for "Substrate isolated strained gate-all-around field effect transistor" (Missouri Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,861, issued on July 14, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Substrate isolated strained gate-all-around field effect transistor" was invented by Shawn Thomas (Chesterfield, Mo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Gate-all-around transistor devices and methods for manufacturing the same are provided. The semiconductor device includes a substrate. The substrate includes a plurality of isolation regions formed in the substrate, the plurality of isolation regions comprising an isolation material. The substrate further includes a buffer region formed in the substrate, the buffer region separating adjacent isolation r...