US Patent Issued on July 14 for "Field peak reduction in semiconductor devices with metal corner rounding" (California, North Carolina Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,852, issued on July 14.

"Field peak reduction in semiconductor devices with metal corner rounding" was invented by Olof Tornblad (San Jose, Calif.), Jia Guo (New Hill, N.C.) and Scott Sheppard (Chapel Hill, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Transistor devices having metal structures with rounded corners are provided. In one example, the transistor device includes a Group III-nitride semiconductor structure. The transistor device includes a gate contact and/or a field plate on the Group III-nitride semiconductor structure. One or more of the gate contact or the field plate includes at least one rounded corner."

The patent was filed...