US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Semiconductor device with compositionally varied hafnium-containing dielectric layers and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,856, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device with compositionally varied hafnium-containing dielectric layers and fabrication method thereof" was invented by Bo-Jiun Lin (Hsinchu County, Taiwan), Tsung-En Lee (Taipei City, Taiwan), Tung-Ying Lee (Hsinchu City, Taiwan) and Chao-Ching Cheng (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a channel layer, an adhesion layer disposed over the channel layer, a first hafnium-containing dielectric layer ...