ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,462, issued on Sept. 8, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Apparatus with overlapping deep trench and shallow trench and met... और पढ़ें
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,463, issued on Sept. 8, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.). "Buffer layer for dielectric protection in physical v... और पढ़ें
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,464, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Structure having 2D material cappin... और पढ़ें
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,465, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Conductive structures and methods o... और पढ़ें
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,466, issued on Sept. 8, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Integrated PVD tungsten liner and seamless CVD tungs... और पढ़ें
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,467, issued on Sept. 8, was assigned to Georgia Tech Research Corp. (Atlanta). "Methods for etch barrier deposition and devices made accord... और पढ़ें
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,468, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Metal structures with seams" wa... और पढ़ें
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,469, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Gate contact structure" was inv... और पढ़ें
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,470, issued on Sept. 8, was assigned to Tokyo Electron Ltd. (Tokyo). "Contact patterning" was invented by Hojin Kim (Albany, N.Y.), Minseok... और पढ़ें
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,471, issued on Sept. 8, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device structure with liner layer ... और पढ़ें