US Patent Issued to Intel on April 21 for "Selective growth of high-k oxide on channel of gate-all-around transistors" (Oregon Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,584, issued on April 21, was assigned to Intel Corp. (Santa Clara, Calif.). "Selective growth of high-k oxide on channel of gate-all-aroun... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and method for manufacturing same" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,585, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and method for ma... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 21 for "Semiconductor device and method for thermal dissipation" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,586, issued on April 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and meth... Read More

US Patent Issued to Applied Materials on April 21 for "Backside power rail to deep vias" (Singaporean, American, Dutch Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,587, issued on April 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Backside power rail to deep vias" was invented by ... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Semiconductor device and semiconductor memory cell including the same" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,588, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and semiconductor mem... Read More

US Patent Issued on April 21 for "FCNVM-ALEFD (fully covered non-volatile memory (NVM) over advanced low electrostatic field transistor (ALEFD)" (Washington, California Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,589, issued on April 21. "FCNVM-ALEFD (fully covered non-volatile memory (NVM) over advanced low electrostatic field transistor (ALEFD)" w... Read More

US Patent Issued to UNITED MICROELECTRONICS on April 21 for "Semiconductor device and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,590, issued on April 21, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device and method for fabri... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,591, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China). "Semiconductor structure and fabrication method... Read More

US Patent Issued to GlobalFoundries U.S. on April 21 for "Structure with buried doped region and methods to form same" (Singaporean, American Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,592, issued on April 21, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Structure with buried doped region and methods to form ... Read More

US Patent Issued to Diodes on April 21 for "Power MOSFET with gate-source ESD diode structure" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,593, issued on April 21, was assigned to Diodes Inc. (Plano, Texas). "Power MOSFET with gate-source ESD diode structure" was invented by W... Read More

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