US Patent Issued to Intel on April 21 for "Selective growth of high-k oxide on channel of gate-all-around transistors" (Oregon Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,584, issued on April 21, was assigned to Intel Corp. (Santa Clara, Calif.).

"Selective growth of high-k oxide on channel of gate-all-around transistors" was invented by Ashish Verma Penumatcha (Beaverton, Ore.), Sarah Atanasov (Beaverton, Ore.), Seung Hoon Sung (Portland, Ore.), Rahul Ramamurthy (Hillsboro, Ore.), I-Cheng Tung (Hillsboro, Ore.), Uygar E. Avci (Portland, Ore.), Matthew V. Metz (Portland, Ore.), Jack T. Kavalieros (Portland, Ore.), Chia-Ching Lin (Portland, Ore.) and Kaan Oguz (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclosed herein include transistor devices and methods of forming such devices. In ...