ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,588, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device and semiconductor memory cell including the same" was invented by Sungwon Yoo (Suwon-si, South Korea), Yongseok Kim (Suwon-si, South Korea), Min Tae Ryu (Suwon-si, South Korea), Huije Ryu (Suwon-si, South Korea), Yongjin Lee (Suwon-si, South Korea), Wonsok Lee (Suwon-si, South Korea) and Min Hee Cho (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a gate electrode on the substrate, a channel layer between the substrate and the gate electrode, a source electrode in cont...