US Patent Issued to UNITED MICROELECTRONICS on April 21 for "Semiconductor device and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,590, issued on April 21, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Kun-Sheng Yang (Pingtung County, Taiwan), Yi-Wen Chen (Tainan City, Taiwan), Hung-Yi Wu (Keelung City, Taiwan), Yi Chuen Eng (Tainan City, Taiwan) and Yu-Hsiang Lin (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having a medium-voltage (MV) region and a logic region, a gate structure on the MV region, a first single diffusion break (SDB) structure and a second SDB structure in the substrate directly under the gat...