US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and method for manufacturing same" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,585, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and method for manufacturing same" was invented by Min Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for manufacturing same are provided. The semiconductor structure includes: a substrate, and a first transistor and a second transistor protruding from the substrate. The first transistor at least includes a first doped region and a second doped region arranged from bottom to top. The second transistor at least includes a third doped region and a fourth doped region arranged ...