US Patent Issued to Taiwan Semiconductor Manufacturing on April 21 for "Semiconductor device and method of forming thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,579, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and method o... Read More

US Patent Issued to Renesas Electronics on April 21 for "Vertical MOSFET super junction device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,580, issued on April 21, was assigned to Renesas Electronics Corp. (Tokyo). "Vertical MOSFET super junction device and method of manufactu... Read More

US Patent Issued to Intel on April 21 for "Multi-layered source and drain contacts for a thin film transistor (TFT) structure" (Oregon Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,582, issued on April 21, was assigned to Intel Corp. (Santa Clara, Calif.). "Multi-layered source and drain contacts for a thin film trans... Read More

US Patent Issued to Kioxia on April 21 for "Method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,583, issued on April 21, was assigned to Kioxia Corp. (Tokyo). "Method for manufacturing semiconductor device" was invented by Takuya Kiku... Read More

US Patent Issued to Intel on April 21 for "Selective growth of high-k oxide on channel of gate-all-around transistors" (Oregon Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,584, issued on April 21, was assigned to Intel Corp. (Santa Clara, Calif.). "Selective growth of high-k oxide on channel of gate-all-aroun... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and method for manufacturing same" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,585, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and method for ma... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 21 for "Semiconductor device and method for thermal dissipation" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,586, issued on April 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and meth... Read More

US Patent Issued to Applied Materials on April 21 for "Backside power rail to deep vias" (Singaporean, American, Dutch Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,587, issued on April 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Backside power rail to deep vias" was invented by ... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Semiconductor device and semiconductor memory cell including the same" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,588, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and semiconductor mem... Read More

US Patent Issued on April 21 for "FCNVM-ALEFD (fully covered non-volatile memory (NVM) over advanced low electrostatic field transistor (ALEFD)" (Washington, California Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,589, issued on April 21. "FCNVM-ALEFD (fully covered non-volatile memory (NVM) over advanced low electrostatic field transistor (ALEFD)" w... Read More

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