US Patent Issued to Renesas Electronics on April 21 for "Vertical MOSFET super junction device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,580, issued on April 21, was assigned to Renesas Electronics Corp. (Tokyo).

"Vertical MOSFET super junction device and method of manufacturing the same" was invented by Katsumi Eikyu (Tokyo), Yuta Nabuchi (Tokyo), Atsushi Sakai (Tokyo), Akihiro Shimomura (Tokyo) and Satoru Tokuda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a plurality of unit cells. Each of the plurality of unit cells has a pair of column regions, a pair of trenches formed between the pair of column regions in the X direction, and a pair of gate electrodes formed in the pair of trenches via a gate insulating film, respectively. The two unit...