ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,899, issued on Oct. 27, was assigned to Tokyo Electron Ltd. (Tokyo). "Selective deposition of passivating layer during spacer etching" was ... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,900, issued on Oct. 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Method comprising an anti-reflection tri-layer s... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,901, issued on Oct. 27, was assigned to APPLIED MATERALS INC.. "Interfacial layer for anneal capping layer" was invented by Yi Zheng (Sunny... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,902, issued on Oct. 27, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Gradient oxidation and etch of PVD molybdenum for bo... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,903, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Cobalt fill for gate structures" wa... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,904, issued on Oct. 27, was assigned to Zhuhai ACCESS Semiconductor Co. LTD. (Zhuhai City, China). "Substrate manufacturing method for an e... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,905, issued on Oct. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and methods of... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,906, issued on Oct. 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Method of manufacturing semiconductor device" wa... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,907, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor package" was invented by Sunky... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,908, issued on Oct. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor structure having back... Read More