ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,908, issued on Oct. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure having back-side interconnect and manufacturing method thereof" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a plurality of semiconductor sheets on a front-side of a semiconductive layer; forming a gate strip surrounding each of the semiconductor sheets; forming a plurality of source/drain structures on either side of each of the semiconductor sheets; doping the semiconductive layer with a dopant, the dopant has a same conductivity type as the...