ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,905, issued on Oct. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and methods of formation via etching operations" was invented by Ying-Yu Lai (Taipei, Taiwan), Chih-Yun Wang (Kaohsiung City, Taiwan), Chih-Hsuan Lin (Hsinchu City, Taiwan) and Hsi Chung Chen (Tainan City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Multiple dry etching operations are performed to form an opening for an interconnect structure, with a wet cleaning operation performed in between the dry etching operations. This multi-step etch approach increases the effectiveness of residual material removal, which inc...