US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Cobalt fill for gate structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,903, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Cobalt fill for gate structures" was invented by Chung-Liang Cheng (Hsinchu, Taiwan) and Ziwei Fang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a gate structure includes forming a trench within an interlayer dielectric layer (ILD) that is disposed on a semiconductor substrate, the trench exposing a top surface of the semiconductor substrate, forming an interfacial layer at a bottom of the trench, forming a dielectric layer within the trench, forming a work function metal layer on the dielectric layer, formi...