US Patent Issued to Tokyo Electron on Oct. 27 for "Selective deposition of passivating layer during spacer etching" (Texas, New York Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,899, issued on Oct. 27, was assigned to Tokyo Electron Ltd. (Tokyo).

"Selective deposition of passivating layer during spacer etching" was invented by Ya-Ming Chen (Austin, Texas), Eric Chih-Fang Liu (Albany, N.Y.), Shihsheng Chang (Albany, N.Y.) and Peter Biolsi (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for processing a substrate includes: forming a mandrel over the substrate including an underlying layer, the mandrel having a top surface and sidewalls, the substrate including an exposed surface including a portion of the underlying layer; conformally depositing a spacer material over the substrate, the spacer material c...