US Patent Issued to APPLIED MATERALS on Oct. 27 for "Interfacial layer for anneal capping layer" (American, Chinese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,901, issued on Oct. 27, was assigned to APPLIED MATERALS INC..

"Interfacial layer for anneal capping layer" was invented by Yi Zheng (Sunnyvale, Calif.), Xiaozhou Che (Santa Clara, Calif.), Qiang Ma (Cupertino, Calif.) and Jun Fang (Xi'an, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a capping layer on a substrate for annealing processes incorporates an interfacial layer of a material that is at least one element of a chemical compound used in the substrate. In some embodiments, the method may comprise depositing an interfacial layer on the substrate where the interfacial layer is amorphous silicon (a-Si), amorphous SiCx,...