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US Patent Issued to NITTO DENKO on May 12 for "Piezoelectric device having electrode formed of amorphous oxide conductor" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,565, issued on May 12, was assigned to NITTO DENKO Corp. (Ibaraki, Japan). "Piezoelectric device having electrode formed of amorphous oxide ... Read More


US Patent Issued to ROBERT BOSCH on May 12 for "Micromechanical component, sound transducer device, and method for producing a micromechanical component" (German Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,566, issued on May 12, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany). "Micromechanical component, sound transducer device, and meth... Read More


US Patent Issued to UNITED MICROELECTRONICS on May 12 for "Method for fabricating semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,567, issued on May 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Method for fabricating semiconductor device" ... Read More


US Patent Issued to UNITED MICROELECTRONICS on May 12 for "Magnetoresistive random access memory and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,568, issued on May 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Magnetoresistive random access memory and met... Read More


US Patent Issued to TDK on May 12 for "Light detection element having first and second ferromagnetic layers sandwiching spacer layer and receiving device" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,569, issued on May 12, was assigned to TDK Corp. (Tokyo). "Light detection element having first and second ferromagnetic layers sandwiching ... Read More


US Patent Issued to International Business Machines on May 12 for "Beveled magneto-resistive random access memory pillar structure" (New York, New Jersey Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,570, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Beveled magneto-resistive random access memory... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on May 12 for "Magnetoresistive memory device and integrated memory circuit" (Taiwanese, American Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,571, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Magnetoresistive memory device and in... Read More


US Patent Issued to NEC on May 12 for "Quantum device comprising first connection portions within deformation suppression region defined by second connection portions" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,572, issued on May 12, was assigned to NEC Corp. (Tokyo). "Quantum device comprising first connection portions within deformation suppressio... Read More


US Patent Issued to International Business Machines on May 12 for "Trimming intermediate carbon layer to achieve nanometer scale patterning" (New York Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,573, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Trimming intermediate carbon layer to achieve ... Read More


US Patent Issued to Commissariat a l'Energie Atomique et aux Energies Alternatives on May 12 for "Phase change memory device" (French Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,574, issued on May 12, was assigned to Commissariat a l'Energie Atomique et aux Energies Alternatives (Paris). "Phase change memory device" ... Read More