ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,573, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Trimming intermediate carbon layer to achieve nanometer scale patterning" was invented by Luxherta Buzi (Chappaqua, N.Y.), Robert L. Bruce (White Plains, N.Y.) and Hiroyuki Miyazoe (White Plains, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of include a technique for trimming an intermediate carbon layer by hydrogen (H2) plasma to achieve nanometer scale critical dimension patterning with high selectivity to metals and dielectrics. The technique includes providing a structure as a stack having at least one metal layer, a carbon layer, and ...