ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,567, issued on May 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).
"Method for fabricating semiconductor device" was invented by Hung-Yi Wu (Keelung City, Taiwan), Jia-Rong Wu (Kaohsiung City, Taiwan), Yu-Hsiang Lin (New Taipei City, Taiwan), Yi-Wen Chen (Tainan City, Taiwan) and Kun-Sheng Yang (Pingtung County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a substrate, forming a spin orbit torque (SOT) layer on the MTJ, forming an inter-metal dielectric (IMD) layer around the MTJ and the SOT layer, f...