US Patent Issued to International Business Machines on May 12 for "Beveled magneto-resistive random access memory pillar structure" (New York, New Jersey Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,570, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Beveled magneto-resistive random access memory pillar structure" was invented by Oscar van der Straten (Guilderland Center, N.Y.), Chih-Chao Yang (Glenmont, N.Y.) and Praneet Adusumilli (Somerset, N.J.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a magnetic tunnel junction pillar located between, and electrically connected to, a bottom electrode and a top electrode. The magnetic tunnel junction pillar is composed of a plurality of device layers vertically stacked above the bottom electrode. Each of the plurality of device layers, t...