US Patent Issued to Taiwan Semiconductor Manufacturing on May 12 for "Magnetoresistive memory device and integrated memory circuit" (Taiwanese, American Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,571, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Magnetoresistive memory device and integrated memory circuit" was invented by Ming-Yuan Song (Hsinchu City, Taiwan), Chi-Feng Pai (New Taipei City, Taiwan), Xinyu Bao (Fremont, Calif.) and Chen-Yu Hu (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive memory device and an integrated memory circuit are provided. The magnetoresistive memory device includes a magnetic tunneling junction (MTJ) and a composite spin orbit torque (SOT) channel in contact with a terminal of the MTJ. The SOT channel includes: a first ch...