US Patent Issued to UNITED MICROELECTRONICS on May 12 for "Magnetoresistive random access memory and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,568, issued on May 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Magnetoresistive random access memory and method for fabricating the same" was invented by Hui-Lin Wang (Taipei City, Taiwan), Ching-Hua Hsu (Kaohsiung City, Taiwan), Che-Wei Chang (Taichung City, Taiwan) and Chen-Yi Weng (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of providing a substrate comprising a magnetic random access memory (MRAM) region and a logic region, forming a first magnetic tunneling junction (MTJ) on the MRAM region, forming a first inter-metal di...