ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,806, issued on Aug. 25, was assigned to Huawei Technologies'Co.'Ltd.' (Shenzhen, China). "Memory, gate-all-around field-effect transistor, ... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,807, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Gate dielectric layers for stac... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,808, issued on Aug. 25, was assigned to Zinite Corp. (Edmonton, Canada). "Source/drain channel interface with nitrogen-containing oxide" wa... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,809, issued on Aug. 25, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan). "Metal oxide, formation method of m... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,810, issued on Aug. 25, was assigned to Hon Young Semiconductor Corp. (Hsinchu City, Taiwan). "Semiconductor device and forming method ther... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,811, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Lightly-doped channel extension... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,813, issued on Aug. 25, was assigned to Nexperia B.V. (Nijmegen, Netherlands). "Semiconductor power device with improved ruggedness" was in... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,814, issued on Aug. 25, was assigned to Magnachip Semiconductor Ltd. (Cheongju-si, South Korea). "Fast recovery diode and method for manufa... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,815, issued on Aug. 25, was assigned to Silanna Asia Pte Ltd (Singapore). "Power device integration on a common substrate" was invented by ... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,816, issued on Aug. 25, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device" was invented by Tatsuo Harada (Tokyo). A... Read More